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| SMD Type N-Channel 200-V (D-S) MOSFET KI4464DY IC IC Features PWM Optimized for (Lowest Qg and Low RG) TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 70 Pulsed Drain Current Single Avalanch Current Single Avalanch Energy L = 0.1 mH L = 0.1 mH IDM IAS EAS IS PD TJ, Tstg 2.1 2.5 1.6 -55 to 150 Symbol VDS VGS ID 2.2 1.7 8 3 0.45 1.2 1.5 0.9 mJ A W 10 secs 200 20 1.7 1.3 A Steady State Unit V Continuous Source Current ( Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 SMD Type KI4464DY Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) t 10 sec Symbol RthJA RthJF Typical 37 68 17 Maximum 50 85 21 /W Unit IC IC Steady-State Steady-State * Surface Mounted on 1" X 1" FR4 Board. Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ s VDD=100V,RL=100 ,ID=1A,VGEN=10V,RG=6 VDS = 100 V, VGS = 10 V, ID = 2.2 A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A Min 2.0 Typ Max 4 100 1 A VDS = 160 V, VGS = 0 V, TJ = 55 VDS 5 V, VGS = 10 V 8 0.195 0.210 8.0 0.8 12 2.5 3.8 2.5 10 12 15 15 60 15 20 25 25 90 ns ns 1.2 18 nC 0.240 0.260 S V 5 A Unit V nA 20 V VDS = 160 V, VGS = 0 V VGS = 10 V, ID = 2.2 A VGS = 6.0 V, ID = 2.1 A VDS = 15 V, ID = 2.2 A IS = 2.1 A, VGS = 0 V 300 s,duty cycle 2% 2 www.kexin.com.cn |
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